[IEEE 2010 IEEE International Electron Devices Meeting...

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[IEEE 2010 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2010.12.6-2010.12.8)] 2010 International Electron Devices Meeting - Novel 3-dimensional Dual Control-gate with Surrounding Floating-gate (DC-SF) NAND flash cell for 1Tb file storage application

SungJin Whang,, KiHong Lee,, DaeGyu Shin,, BeomYong Kim,, MinSoo Kim,, JinHo Bin,, JiHye Han,, SungJun Kim,, BoMi Lee,, YoungKyun Jung,, SungYoon Cho,, ChangHee Shin,, HyunSeung Yoo,, San
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Year:
2010
Language:
english
DOI:
10.1109/iedm.2010.5703447
File:
PDF, 706 KB
english, 2010
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