[IEEE 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Waikoloa, HI, USA (2014.6.15-2014.6.19)] 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Impacts of conduction band offset and border traps on Vth instability of gate recessed normally-off GaN MIS-HEMTs
Choi, Woojin, Ryu, Hojin, Jeon, Namcheol, Lee, Minseong, Lee, Neung-Hee, Seo, Kwang-Seok, Cha, Ho-YoungYear:
2014
Language:
english
DOI:
10.1109/ispsd.2014.6856053
File:
PDF, 1.28 MB
english, 2014