Electrostatic Mechanisms Responsible for Device Degradation...

IEEE Transactions on Nuclear Science 2008 / 08 Vol. 55; Iss. 4

Electrostatic Mechanisms Responsible for Device Degradation in Proton Irradiated AlGaN/AlN/GaN HEMTs

Kalavagunta, A., Touboul, A., Shen, L., Schrimpf, R. D., Reed, R. A., Fleetwood, D. M., Jain, R. K., Mishra, U. K.
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Volume:
55
Language:
english
Journal:
IEEE Transactions on Nuclear Science
DOI:
10.1109/tns.2008.2001705
Date:
August, 2008
File:
PDF, 470 KB
english, 2008
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