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Proton induced single event upset cross section prediction for 0.15 μm six-transistor (6T) silicon-on-insulator static random access memories
Li, Lei, Zhou, Wanting, Liu, HuihuaVolume:
49
Language:
english
Journal:
Journal of Nuclear Science and Technology
DOI:
10.1080/00223131.2012.669247
Date:
April, 2012
File:
PDF, 604 KB
english, 2012