Ge interface engineering using ultra-thin La2O3 and Y2O3...

Ge interface engineering using ultra-thin La2O3 and Y2O3 films: A study into the effect of deposition temperature

Mitrovic, I. Z., Althobaiti, M., Weerakkody, A. D., Dhanak, V. R., Linhart, W. M., Veal, T. D., Sedghi, N., Hall, S., Chalker, P. R., Tsoutsou, D., Dimoulas, A.
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Volume:
115
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4868091
Date:
March, 2014
File:
PDF, 3.74 MB
english, 2014
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