Point defects in neutron-transmutation-doped Czochralski-grown Si studied by positron annihilation
X.T. Meng, A.K. Liolios, M. Chardalas, Sp. Dedoussis, C.A. Eleftheriadis, Staf. CharalambousVolume:
157
Year:
1991
Language:
english
Pages:
5
DOI:
10.1016/0375-9601(91)90411-z
File:
PDF, 408 KB
english, 1991