[IEEE 2010 IEEE Radio Frequency Integrated Circuits Symposium - Anaheim, CA, USA (2010.05.23-2010.05.25)] 2010 IEEE Radio Frequency Integrated Circuits Symposium - A 31-dBm, high ruggedness power amplifier in 65-nm standard CMOS with high-efficiency stacked-cascode stages
Leuschner, Stephan, Pinarello, Sandro, Hodel, Uwe, Mueller, Jan-Erik, Klar, HeinrichYear:
2010
Language:
english
DOI:
10.1109/rfic.2010.5477401
File:
PDF, 168 KB
english, 2010