Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures
2001 Vol. 19; Iss. 4
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Mobility enhancement by reduced remote impurity scattering in a pseudomorphic In[sub 0.7]Ga[sub 0.3]As/In[sub 0.52]Al[sub 0.48]As quantum well high electron mobility transistor structure with (411)A super-flat interfaces grown by molecular-beam epitaxy
Watanabe, I., Kanzaki, K., Aoki, T., Kitada, T., Shimomura, S., Hiyamizu, S.Volume:
19
Year:
2001
Language:
english
DOI:
10.1116/1.1387454
File:
PDF, 367 KB
english, 2001