[IEEE IC's (ISPSD) - Barcelona, Spain (2009.06.14-2009.06.18)] 2009 21st International Symposium on Power Semiconductor Devices & IC's - The Bi-mode Insulated Gate Transistor (BIGT) a potential technology for higher power applications
Rahimo, M., Kopta, A., Schlapbach, U., Vobecky, J., Schnell, R., Klaka, S.Year:
2009
Language:
english
DOI:
10.1109/ispsd.2009.5158057
File:
PDF, 766 KB
english, 2009