Characteristics of Two-Stage Γ-Gate on AlGaAs/InGaAs/AlGaAs DH-HEMTs by Using AlGaAs/InGaP Etching-Stop Layers
Lin, Jia Chuan, Zeng, Fu Xiang, Wei, Jia Na, Liu, Chi Ting, Hsu, Meng Kai, Hou, Hsi TingVolume:
415-417
Language:
english
Journal:
Advanced Materials Research
DOI:
10.4028/www.scientific.net/amr.415-417.1327
Date:
December, 2011
File:
PDF, 390 KB
english, 2011