High Growth Rate of 4H-SiC Epilayers on On-Axis Substrates...

Crystal Growth & Design 2010 / 12 Vol. 10; Iss. 12

High Growth Rate of 4H-SiC Epilayers on On-Axis Substrates with Different Chlorinated Precursors

Leone, Stefano, Beyer, Franziska C., Pedersen, Henrik, Kordina, Olof, Henry, Anne, Janzén, Erik
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Volume:
10
Language:
english
Journal:
Crystal Growth & Design
DOI:
10.1021/cg101288u
Date:
December, 2010
File:
PDF, 2.94 MB
english, 2010
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