(Invited) Stress Simulations of Si- and Ge-Channel FinFETs...

ECS Transactions 2013 / 05 Vol. 53; Iss. 1

(Invited) Stress Simulations of Si- and Ge-Channel FinFETs for the 14 nm-Node and Beyond

Eneman, G., Brunco, D. P., Witters, L., Vincent, B., Favia, P., Hikavyy, A., De Keersgieter, A., Mitard, J., Loo, R., Veloso, A., Richard, O., Bender, H., Vandervorst, W., Caymax, M., Horiguchi, N., C
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Volume:
53
Language:
english
Journal:
ECS Transactions
DOI:
10.1149/05301.0225ecst
Date:
May, 2013
File:
PDF, 344 KB
english, 2013
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