A full-band Monte Carlo model for hole transport in silicon

Journal of Applied Physics 1997 Vol. 81; Iss. 5

A full-band Monte Carlo model for hole transport in silicon

Jallepalli, S., Rashed, M., Shih, W.-K., Maziar, C. M., Tasch, A. F.
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Volume:
81
Year:
1997
Language:
english
DOI:
10.1063/1.364287
File:
PDF, 298 KB
english, 1997
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