Examination of growth rate during hydride vapor phase...

Journal of Crystal Growth 2014 / 12 Vol. 407

Examination of growth rate during hydride vapor phase epitaxy of GaN on ammonothermal GaN seeds

Sochacki, T., Amilusik, M., Fijalkowski, M., Lucznik, B., Weyher, J.L., Grzegory, I., Kucharski, R., Iwinska, M., Bockowski, M.
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Volume:
407
Language:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2014.09.007
Date:
December, 2014
File:
PDF, 1.26 MB
english, 2014
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