Comparative study of amorphous indium gallium zinc oxide...

Materials Science in Semiconductor Processing 2014 / 11 Vol. 27

Comparative study of amorphous indium gallium zinc oxide thin film transistors passivated by sputtered non-stoichiometric aluminum and titanium oxide layers

Dong, Chengyuan, Wu, Jie, Chen, Yuting, Zhou, Daxiang, Hu, Zhe, Xie, Haiting, Chiang, Cheng-Lung, Chen, Po-Lin, Lai, Tzu-Chieh, Lo, Chang-Cheng, Lien, A.
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Volume:
27
Language:
english
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2014.08.002
Date:
November, 2014
File:
PDF, 1.70 MB
english, 2014
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