Continuation methods in semiconductor device simulation

Continuation methods in semiconductor device simulation

W.M. Coughran Jr., M.R. Pinto, R.K. Smith
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Volume:
26
Year:
1989
Language:
english
Pages:
19
DOI:
10.1016/0377-0427(89)90147-7
File:
PDF, 1.33 MB
english, 1989
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