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Intersubband transitions for single, double and triple Si -doped GaAs layers
Ozturk, Emine, Sokmen, IsmailVolume:
36
Language:
english
Journal:
Journal of Physics D: Applied Physics
DOI:
10.1088/0022-3727/36/20/006
Date:
October, 2003
File:
PDF, 439 KB
english, 2003