High-speed, high-quality crystal growth of 4H-SiC by...

Applied Physics Express 2014 / 06 Vol. 7; Iss. 6

High-speed, high-quality crystal growth of 4H-SiC by high-temperature gas source method

Hoshino, Norihiro, Kamata, Isaho, Tokuda, Yuichiro, Makino, Emi, Sugiyama, Naohiro, Kojima, Jun, Tsuchida, Hidekazu
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Volume:
7
Language:
english
Journal:
Applied Physics Express
DOI:
10.7567/apex.7.065502
Date:
June, 2014
File:
PDF, 721 KB
english, 2014
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