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[IEEE 2008 IEEE International Reliability Physics Symposium (IRPS) - Phoenix, AZ, USA (2008.04.27-2008.05.1)] 2008 IEEE International Reliability Physics Symposium - Impacts of process induced interfacial defects on gate oxide integrity
Liu, N., Haggag, A., Peschke, J., Moosa, M., Weintraub, C., Lazar, H., Campbell, G., Srivastava, A., Liu, J., Porter, J., Picone, K., Parrish, J., Jiang, J.Year:
2008
Language:
english
DOI:
10.1109/relphy.2008.4559008
File:
PDF, 256 KB
english, 2008