Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures
2012 Vol. 30; Iss. 2
Characteristic comparison of AlGaN/GaN enhancement-mode HEMTs with CHF3 and CF4 surface treatment
Chen, C. H., Yang, C. W., Chiu, H. C., Fu, Jeffrey. S.Volume:
30
Year:
2012
Language:
english
DOI:
10.1116/1.3680115
File:
PDF, 1.72 MB
english, 2012