Trapped charge dynamics in a sol–gel based TiO 2 high- k gate dielectric silicon metal–oxide–semiconductor field effect transistor
Khan, M Ziaur Rahman, Hasko, D G, Saifullah, M S M, Welland, M EVolume:
21
Language:
english
Journal:
Journal of Physics: Condensed Matter
DOI:
10.1088/0953-8984/21/21/215902
Date:
May, 2009
File:
PDF, 669 KB
english, 2009