A 2.0 μm cutoff wavelength separate absorption, charge, and multiplication layer avalanche photodiode using strain-compensated InGaAs quantum wells
Dries, J. Christopher, Gokhale, Milind R., Forrest, Stephen R.Volume:
74
Year:
1999
Language:
english
DOI:
10.1063/1.123904
File:
PDF, 375 KB
english, 1999