Charge trapping characteristics of atomic-layer-deposited...

Semiconductor Science and Technology 2007 / 08 Vol. 22; Iss. 8

Charge trapping characteristics of atomic-layer-deposited HfO 2 films with Al 2 O 3 as a blocking oxide for high-density non-volatile memory device applications

Maikap, S, Lee, H Y, Wang, T-Y, Tzeng, P-J, Wang, C C, Lee, L S, Liu, K C, Yang, J-R, Tsai, M-J
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Volume:
22
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/22/8/010
Date:
August, 2007
File:
PDF, 321 KB
english, 2007
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