[IEEE 2003 IEEE Conference on Electron Devices and...

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[IEEE 2003 IEEE Conference on Electron Devices and Solid-State Circuits - Hong Kong, China (16-18 Dec. 2003)] 2003 IEEE Conference on Electron Devices and Solid-State Circuits (IEEE Cat. No.03TH8668) - Ferroelectric memory design based on grounded-plate PMOS-gate cell architecture

Yeonbae Chung,, Jung-Hyun Kim,, Jae-Eun Yoon,
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Year:
2003
Language:
english
DOI:
10.1109/edssc.2003.1283482
File:
PDF, 286 KB
english, 2003
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