Drain-Current Deep Level Transient Spectroscopy...

Materials Science Forum 2014 / 2 Vol. 778-780

Drain-Current Deep Level Transient Spectroscopy Investigation on Epitaxial Graphene/6H-SiC Field Effect Transistors

Roensch, Sebastian, Hertel, Stefan, Reshanov, Sergey, Schöner, Adolf, Krieger, Michael, Weber, Heiko B.
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Volume:
778-780
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/msf.778-780.436
Date:
February, 2014
File:
PDF, 1.08 MB
english, 2014
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