Mechanism of random telegraph noise in junction leakage current of metal-oxide-semiconductor field-effect transistor
Mori, Yuki, Yoshimoto, Hiroyuki, Takeda, Kenichi, Yamada, Ren-ichiVolume:
111
Year:
2012
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4721658
File:
PDF, 2.94 MB
english, 2012