Effect of Fringing Capacitances on the RF Performance of...

IEEE Transactions on Electron Devices 2014 / 03 Vol. 61; Iss. 3

Effect of Fringing Capacitances on the RF Performance of GaN HEMTs With T-Gates

Song, Bo, Sensale-Rodriguez, Berardi, Wang, Ronghua, Guo, Jia, Hu, Zongyang, Yue, Yuanzheng, Faria, Faiza, Schuette, Michael, Ketterson, Andrew, Beam, Edward, Saunier, Paul, Gao, Xiang, Guo, Shiping,
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Volume:
61
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/ted.2014.2299810
Date:
March, 2014
File:
PDF, 2.25 MB
english, 2014
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