Fluorinated Polyimide Gate Dielectrics for the Advancing...

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Fluorinated Polyimide Gate Dielectrics for the Advancing the Electrical Stability of Organic Field-Effect Transistors

Baek, Yonghwa, Lim, Sooman, Yoo, Eun Joo, Kim, Lae Ho, Kim, Haekyoung, Lee, Seung Woo, Kim, Se Hyun, Park, Chan Eon
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Language:
english
Journal:
ACS Applied Materials & Interfaces
DOI:
10.1021/am5035076
Date:
August, 2014
File:
PDF, 3.42 MB
english, 2014
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