GaN metal–insulator–semiconductor high-electron-mobility...

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures 2013 Vol. 31; Iss. 5

GaN metal–insulator–semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation

Hwang, Ya-Hsi, Liu, Lu, Velez, Camilo, Ren, Fan, Gila, Brent P., Hays, David, Pearton, Stephen J., Lambers, Eric, Kravchenko, Ivan I., Lo, Chien-Fong, Johnson, Jerry W.
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Volume:
31
Year:
2013
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.4816477
File:
PDF, 783 KB
english, 2013
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