Induced Defects in GaAs Etched by Low Energy Ions in...

Japanese Journal of Applied Physics 1989 / 11 Vol. 28; Iss. Part 1, No

Induced Defects in GaAs Etched by Low Energy Ions in Electron Beam Excited Plasma (EBEP) System

Yu, Jin-Zhong, Masui, Norio, Yuba, Yoshihiko, Hara, Tamio, Hamagaki, Manabu, Aoyagi, Yoshinobu, Gamo, Kenji, Namba, Susumu
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Volume:
28
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.28.2391
Date:
November, 1989
File:
PDF, 777 KB
1989
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