High speed Bias Temperature Instability measurements on...

Solid-State Electronics 2014 / 11 Vol. 101

High speed Bias Temperature Instability measurements on 20nm RMG HKMG MOSFETs

Chandra, Nishant, Chandrashekhar, Sandhya, Francis, Rick, Kerber, Andreas, Srinivasan, Purushothaman, Nigam, Tanya
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Volume:
101
Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2014.06.032
Date:
November, 2014
File:
PDF, 1.08 MB
english, 2014
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