Recrystallization of amorphous ion-implanted silicon...

Philosophical Magazine Letters 2012 / 11 Vol. 92; Iss. 11

Recrystallization of amorphous ion-implanted silicon carbide after thermal annealing

Miro, S., Costantini, J.-M., Sorieul, S., Gosmain, L., Thomé, L.
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Volume:
92
Language:
english
Journal:
Philosophical Magazine Letters
DOI:
10.1080/09500839.2012.713133
Date:
November, 2012
File:
PDF, 310 KB
english, 2012
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