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Enhanced Device Performance of Germanium Nanowire Junctionless (GeNW-JL) MOSFETs by Germanide Contact Formation with Ar Plasma Treatment
Yoon, Young Gwang, Kim, Tae Kyun, Hwang, In-Chan, Lee, Hyun-Seung, Hwang, Byeong-Woon, Moon, Jung-Min, Seo, Yu-Jin, Lee, Suk Won, Jo, Moon-Ho, Lee, Seok-HeeVolume:
6
Language:
english
Journal:
ACS Applied Materials & Interfaces
DOI:
10.1021/am403971x
Date:
March, 2014
File:
PDF, 3.52 MB
english, 2014