600 V-18 A GaN Power MOS-HEMTs on 150 mm Si Substrates With...

IEEE Electron Device Letters 2014 / 04 Vol. 35; Iss. 4

600 V-18 A GaN Power MOS-HEMTs on 150 mm Si Substrates With Au-Free Electrodes

Seo, Deok Won, Choi, Hong Goo, Twynam, John, Kim, Ki Min, Yim, Jeong Soon, Moon, Sung-Woon, Jung, Sungdal, Lee, Jongsub, Roh, Sungwon D.
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Volume:
35
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2014.2304587
Date:
April, 2014
File:
PDF, 713 KB
english, 2014
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