Tunable threshold voltage of an n-type Si nanowire...

Nanotechnology 2014 / 05 Vol. 25; Iss. 20

Tunable threshold voltage of an n-type Si nanowire ferroelectric-gate field effect transistor for high-performance nonvolatile memory applications

Van, Ngoc Huynh, Lee, Jae-Hyun, Sohn, Jung Inn, Cha, SeungNam, Whang, Dongmok, Kim, Jong Min, Kang, Dae Joon
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Volume:
25
Language:
english
Journal:
Nanotechnology
DOI:
10.1088/0957-4484/25/20/205201
Date:
May, 2014
File:
PDF, 1.20 MB
english, 2014
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