Impact ionization of excitons in Ge/Si structures with Ge quantum dots grown on the oxidized Si(100) surfaces
Shklyaev, A. A., Shegai, O. A., Nakamura, Y., Ichikawa, M.Volume:
115
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4875101
Date:
May, 2014
File:
PDF, 1015 KB
english, 2014