Characterization of Carrier Concentration and Mobility in...

Japanese Journal of Applied Physics 2004 / 8 Vol. 43; Iss. 8A

Characterization of Carrier Concentration and Mobility in n-type SiC Wafers Using Infrared Reflectance Spectroscopy

Narita, Katsutoshi, Hijikata, Yasuto, Yaguchi, Hiroyuki, Yoshida, Sadafumi, Nakashima, Shinichi
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Volume:
43
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.43.5151
Date:
August, 2004
File:
PDF, 177 KB
english, 2004
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