![](/img/cover-not-exists.png)
Biaxially strained extremely-thin body In0.53Ga0.47As-on-insulator metal-oxide-semiconductor field-effect transistors on Si substrate and physical understanding on their electron mobility
Kim, SangHyeon, Yokoyama, Masafumi, Nakane, Ryosho, Ichikawa, Osamu, Osada, Takenori, Hata, Masahiko, Takenaka, Mitsuru, Takagi, ShinichiVolume:
114
Year:
2013
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4828481
File:
PDF, 2.69 MB
english, 2013