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(In)AlGaN Heterojunction Field Effect Transistors and Circuits for High-Power Applications at Microwave and Millimeter-Wave Frequencies
Maroldt, Stephan, Quay, Rüdiger, Dennler, Philippe, Schwantuschke, Dirk, Musser, Markus, Dammann, Michael, Aidam, Rolf, Waltereit, Patrick, Tessmann, Axel, Ambacher, OliverVolume:
52
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/jjap.52.08jn13
Date:
August, 2013
File:
PDF, 1.09 MB
english, 2013