(In)AlGaN Heterojunction Field Effect Transistors and...

Japanese Journal of Applied Physics 2013 / 08 Vol. 52; Iss. 8S

(In)AlGaN Heterojunction Field Effect Transistors and Circuits for High-Power Applications at Microwave and Millimeter-Wave Frequencies

Maroldt, Stephan, Quay, Rüdiger, Dennler, Philippe, Schwantuschke, Dirk, Musser, Markus, Dammann, Michael, Aidam, Rolf, Waltereit, Patrick, Tessmann, Axel, Ambacher, Oliver
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
52
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/jjap.52.08jn13
Date:
August, 2013
File:
PDF, 1.09 MB
english, 2013
Conversion to is in progress
Conversion to is failed