Control of carrier concentration by stimulated emission in highly excited direct gap semiconductors
V.D. Egorov, G.O. Müller, H.H. Weber, M.A. Jacobson, A.F. DiteVolume:
117-118
Year:
1983
Language:
english
Pages:
3
DOI:
10.1016/0378-4363(83)90523-5
File:
PDF, 176 KB
english, 1983