Control of carrier concentration by stimulated emission in...

Control of carrier concentration by stimulated emission in highly excited direct gap semiconductors

V.D. Egorov, G.O. Müller, H.H. Weber, M.A. Jacobson, A.F. Dite
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Volume:
117-118
Year:
1983
Language:
english
Pages:
3
DOI:
10.1016/0378-4363(83)90523-5
File:
PDF, 176 KB
english, 1983
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