Resonant Raman scattering in GaAlAs : First order active...

Resonant Raman scattering in GaAlAs : First order active and disorder activated phonon lines. Theory of the IR dielectric susceptibility.

B. Jusserand, R. Bonneville
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Volume:
117-118
Year:
1983
Language:
english
Pages:
3
DOI:
10.1016/0378-4363(83)90530-2
File:
PDF, 197 KB
english, 1983
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