Accommodation of SiGe strain on a universally compliant...

Physical Review B 2014 / 7 Vol. 90; Iss. 3

Accommodation of SiGe strain on a universally compliant porous silicon substrate

Berbezier, Isabelle, Aqua, Jean-Noël, Aouassa, Mansour, Favre, Luc, Escoubas, Stéphanie, Gouyé, Adrien, Ronda, Antoine
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Volume:
90
Language:
english
Journal:
Physical Review B
DOI:
10.1103/physrevb.90.035315
Date:
July, 2014
File:
PDF, 986 KB
english, 2014
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