A novel structure in reducing the on-resistance of a VDMOS

Journal of Semiconductors 2011 / 02 Vol. 32; Iss. 2

A novel structure in reducing the on-resistance of a VDMOS

Yang, Yonghui, Tang, Zhaohuan, Zhang, Zhengyuan, Liu, Yong, Wang, Zhikuan, Tan, Kaizhou, Feng, Zhicheng
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Volume:
32
Language:
english
Journal:
Journal of Semiconductors
DOI:
10.1088/1674-4926/32/2/024005
Date:
February, 2011
File:
PDF, 279 KB
english, 2011
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