[ECS 214th ECS Meeting - Honolulu, HI (October 12 - October 17, 2008)] ECS Transactions - Selective Epitaxial Growth of Germanium on Si Wafers with Shallow Trench Isolation: An Approach for Ge Virtual Substrates
Wang, Gang, Leys, Frederik E., Souriau, Laurent, Loo, Roger, Caymax, Matty, Brunco, David P., Geypen, Jef, Bender, Hugo, Meuris, Marc, Vandervorst, Wilfried, Heyns, Marc M.Volume:
16
Year:
2008
Language:
english
DOI:
10.1149/1.2986842
File:
PDF, 645 KB
english, 2008