![](/img/cover-not-exists.png)
[IEEE 2012 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Suita, Japan (2012.05.9-2012.05.11)] 2012 IEEE International Meeting for Future of Electron Devices, Kansai - Improvement of drain leakage current characteristics in metal-oxide-semiconductor-field-effect-transistor by asymmetric source-drain structure
Choi, Byoungseon, Park, Hyunae, Kim, Dongsoo, Choi, ByoungdeogYear:
2012
Language:
english
DOI:
10.1109/imfedk.2012.6218598
File:
PDF, 222 KB
english, 2012