Optical Activation of Er 3+...

Japanese Journal of Applied Physics 1990 / 4 Vol. 29; Iss. Part 2, No

Optical Activation of Er 3+ Implanted in Silicon by Oxygen Impurities

Favennec, P. N., L'Haridon, H., Moutonnet, D., Salvi, M., Gauneau, M.
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Volume:
29
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.29.l524
Date:
April, 1990
File:
PDF, 386 KB
1990
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