Dislocation structures and strain-relaxation in SiGe buffer...

Applied Surface Science 2004 Vol. 224; Iss. 1-4

Dislocation structures and strain-relaxation in SiGe buffer layers on Si (0 0 1) substrates with an ultra-thin Ge interlayer

Takeo Yamamoto, Akira Sakai, Tomohiro Egawa, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima, Yukio Yasuda
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
224
Year:
2004
Language:
english
Pages:
5
DOI:
10.1016/j.apsusc.2003.08.082
File:
PDF, 378 KB
english, 2004
Conversion to is in progress
Conversion to is failed