Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures
2004 Vol. 22; Iss. 2
![](/img/cover-not-exists.png)
Comparison of Ir and Ni-based Ohmic contacts for AlGaN/GaN high electron mobility transistors
Fitch, R. C., Gillespie, J. K., Moser, N., Jessen, G., Jenkins, T., Dettmer, R., Via, D., Crespo, A., Dabiran, A. M., Chow, P. P., Osinsky, A., La Roche, J. R., Ren, F., Pearton, S. J.Volume:
22
Year:
2004
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.1667508
File:
PDF, 970 KB
english, 2004