Laser ablation of via holes in GaN and AlGaN∕GaN high...

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2006 Vol. 24; Iss. 5

Laser ablation of via holes in GaN and AlGaN∕GaN high electron mobility transistor structures

Anderson, Travis, Ren, Fan, Pearton, Stephen J., Mastro, Michael A., Holm, Ron T., Henry, Rich L., Eddy, Charles R., Lee, Joon Yeob, Lee, Kwan-Young, Kim, Jihyun
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Volume:
24
Year:
2006
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.2335435
File:
PDF, 674 KB
english, 2006
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