SIMS depth profiling of boron ultra shallow junctions using...

Applied Surface Science 2006 Vol. 252; Iss. 19

SIMS depth profiling of boron ultra shallow junctions using oblique O2+ beams down to 150 eV

M. Juhel, F. Laugier, D. Delille, C. Wyon, L.F.Tz. Kwakman, M. Hopstaken
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Volume:
252
Year:
2006
Language:
english
Pages:
3
DOI:
10.1016/j.apsusc.2006.02.242
File:
PDF, 246 KB
english, 2006
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